Apparatus and method of forming silicide in a localized manner
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United States of America Patent
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Oct 21, 2008
Grant Date -
Apr 13, 2006
app pub date -
Oct 12, 2004
filing date -
Oct 12, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.
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