Method of making a MEMS device containing a cavity with isotropic etch followed by anisotropic etch
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United States of America Patent
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Oct 21, 2008
Grant Date -
Mar 22, 2007
app pub date -
Sep 16, 2005
filing date -
Sep 16, 2005
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Expired
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Abstract
A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a cavity under the mask, which mask is left behind as a suspended membrane above the cavity; and performing a subsequent anisotropic etch that etches anisotropically the pattern of the mask in the bottom of the cavity.
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