Method for reducing the fogging effect
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United States of America Patent
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Oct 14, 2008
Grant Date -
Dec 29, 2005
app pub date -
Jun 23, 2005
filing date -
Jun 29, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimized set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.
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