Sputter target based on titanium dioxide

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United States of America Patent

PATENT NO 7431808
APP PUB NO 20030038028A1
SERIAL NO

10223531

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Abstract

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An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 .OMEGA.-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

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Patent Owner(s)

Patent OwnerAddress
HERAEUS MATERIALS TECHNOLOGY GMBH & CO KGHERAEUSSTRASSE 12-14 HANAU 63450

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Schultheis, Markus Fulda, DE 15 77
Simons, Christoph Biebergemund, DE 17 62
Weigert, Martin Hanau, DE 49 589

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