Silica glass crucible with barium-doped inner wall

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United States of America Patent

PATENT NO 7427327
APP PUB NO 20070051297A1
SERIAL NO

11536517

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Abstract

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A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especially suited for intense CZ processes for manufacturing silicon ingots used for solar cells or with silicon that is heavily doped with antimony, boron, or arsenic.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU QUARTZ PRODUCTS CO LTDSHINJUKU SAN-EI BLDG 1-22-2 NISHI-SHINJUKU SHINJUKU-KU TOKYO 160-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kemmochi, Katsuhiko Camas, WA 22 208
Ohama, Yasuo Fukui, JP 16 153

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