Non-volatile memory device and method for fabricating the same
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United States of America Patent
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Sep 16, 2008
Grant Date -
Jun 8, 2006
app pub date -
Oct 12, 2005
filing date -
Oct 13, 2004
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Abstract
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate; forming a first insulation layer covering the gate structures and active regions located at each side of the gate structures; forming a second electrode layer over the first insulation layer; and forming a plurality of control gates on the active regions located at each side of the gate structures by performing an etch-back process to the second electrode layer.
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