Phase shift photomask and method for improving printability of a structure on a wafer
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United States of America Patent
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Sep 16, 2008
Grant Date -
Sep 7, 2006
app pub date -
May 15, 2006
filing date -
Nov 17, 2003
priority date (Note) -
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Abstract
A phase shift photomask and method for improving printability of a structure on a wafer are disclosed. The method includes providing a photomask including a zero degree PSW formed on a top surface of a substrate and a 180 degree PSW formed in a first region of the substrate. An orthogonal PSW that facilitates projection of an increased intensity of radiant energy through a second region of the substrate during a lithography process is formed in the second region between the zero degree PSW and the 180 degree PSW.
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