Optoelectronic component and method for controlling tunneling electron currents by means of photons
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United States of America Patent
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Sep 2, 2008
Grant Date -
Nov 9, 2006
app pub date -
Sep 19, 2005
filing date -
Sep 20, 2004
priority date (Note) -
Expired
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Abstract
An optoelectronic component with a photonic crystal, which also has an electronic band gap, and a method for controlling tunneling electron currents by means of photons are proposed. Essentially loss-free and very fast switching is enabled in that a photonic crystal has a defect mode in its photonic band gap for photons with such an energy that electron transitions, especially in the form of single-electron tunneling processes between adjacent ligand-stabilized metal clusters, can be induced by the irradiation of corresponding photons due to at least one defect site.
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