Metal thin film and semiconductor comprising a metal thin film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 2, 2008
Issued Date -
N/A
app pub date -
Dec 12, 2005
filing date -
Dec 13, 2004
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully