Method for adjusting voltage on a powered Faraday shield
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United States of America Patent
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Aug 19, 2008
Grant Date -
Sep 8, 2005
app pub date -
Apr 19, 2005
filing date -
Jul 31, 2002
priority date (Note) -
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Abstract
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.
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