Resistive coupled hall effect sensor
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United States of America Patent
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Aug 12, 2008
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N/A
app pub date -
Feb 27, 2007
filing date -
Feb 27, 2006
priority date (Note) -
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Abstract
A memory device. There is a hall effect device, a current source in electrical communication with the hall effect device, a current drain in electrical communication with the hall effect device, a first sensor arm in electrical communication with the hall effect device and current drain, and a second sensor arm in electrical communication with the hall effect device and current drain. The second sensor arm has a higher resistance than the first sensor arm. There is a voltage measurement module in electrical communication with the current drain and configured to provide a signal based on the voltage in the current drain.
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