Method for measuring peak carrier concentration in ultra-shallow junctions
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 22, 2008
Grant Date -
Jul 27, 2006
app pub date -
Jan 19, 2006
filing date -
Jan 21, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully