Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same

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United States of America Patent

PATENT NO 7402489
APP PUB NO 20060001019A1
SERIAL NO

11216415

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Abstract

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A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. An insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant.

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Patent Owner(s)

Patent OwnerAddress
NANYAHWA-YA TECHNOLOGY PARK NO 669 FUHSING 3 RD KUEISHAN TAOYUAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fazan, Pierre C Boise, ID 145 4328
Sandhu, Gurtej S Boise, ID 1223 33846

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