Method of fabricating active layer thin film by metal chalcogenide precursor solution
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United States of America Patent
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Jun 24, 2008
Grant Date -
Oct 11, 2007
app pub date -
Jun 5, 2006
filing date -
Apr 11, 2006
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Abstract
A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.
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