Nitride semiconductor wafer
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United States of America Patent
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Jun 24, 2008
Grant Date -
May 3, 2007
app pub date -
Dec 19, 2006
filing date -
Oct 6, 2004
priority date (Note) -
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Abstract
A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.
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