Capacitance probe for thin dielectric film characterization

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United States of America Patent

PATENT NO 7385405
APP PUB NO 20060183255A1
SERIAL NO

11334952

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Abstract

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A capacitance probe for thin dielectric film characterization provides a highly sensitive capacitance measurement method and reduces the contact area needed to obtain such a measurement. Preferably, the capacitance probe is connected to a measurement system by a transmission line and comprises a center conductive tip and RLC components between the center conductor and the ground of the transmission line. When the probe tip is in contact with a sample, an MIS or MIM structure is formed, with the RLC components and the capacitance of the MIS or MIM structure forming a resonant circuit. By sending a driving signal to the probe and measuring the reflected signal from the probe through the transmission line, the resonant characteristic of the resonant circuit can be obtained. The capacitance of the MIS or MIM structure is obtainable from the resonant characteristics and the dielectric film thickness or other dielectric properties are also extractable.

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Patent Owner(s)

Patent OwnerAddress
BRUKER NANO INC112 ROBIN HILL ROAD SANTA BARBARA CA 93117

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Dong Tucson, AZ 558 5317

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