Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device
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United States of America Patent
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May 20, 2008
Grant Date -
Feb 9, 2006
app pub date -
Oct 11, 2005
filing date -
Aug 21, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device includes a substrate divided into a memory cell region and a logic region. A split gate electrode structure is formed in a memory cell region of a substrate. A silicon oxide layer is formed on a sidewall of the split gate electrode structure and a surface of the substrate. A word line is formed on the silicon oxide layer that is positioned on the sidewall of the split gate electrode structure. The word line has an upper width and a lower width. The lower width is greater than the upper width. A logic gate pattern is formed on a logic region of the substrate. The logic gate pattern has a thickness thinner than the lower width of the word line.
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