Gallium nitride based III-V group compound semiconductor device and method of producing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 20, 2008
Grant Date -
Aug 2, 2007
app pub date -
Mar 7, 2007
filing date -
Apr 28, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully