Ion implanting method and apparatus
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United States of America Patent
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May 20, 2008
Grant Date -
Nov 25, 2004
app pub date -
Mar 15, 2004
filing date -
Oct 26, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.
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