Pattern exposure method and pattern exposure apparatus
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United States of America Patent
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May 13, 2008
Grant Date -
Oct 6, 2005
app pub date -
Mar 9, 2005
filing date -
Mar 31, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.
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