Use of TEOS oxides in integrated circuit fabrication processes
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United States of America Patent
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May 13, 2008
Grant Date -
Jul 5, 2007
app pub date -
Jan 4, 2006
filing date -
Jan 4, 2006
priority date (Note) -
Expired
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Abstract
A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide hard mask.
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