Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
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United States of America Patent
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Apr 22, 2008
Grant Date -
Dec 16, 2004
app pub date -
Mar 25, 2004
filing date -
Mar 26, 2003
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Expired
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Abstract
The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5.times.1.013.times.10.sup.5 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH.sub.3 and N.sub.2.
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