Method and structure for deep well structures for long wavelength active regions
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United States of America Patent
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Apr 15, 2008
Grant Date -
Apr 20, 2006
app pub date -
Oct 20, 2004
filing date -
Oct 20, 2004
priority date (Note) -
Expired
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Abstract
Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
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