Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
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United States of America Patent
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Apr 8, 2008
Grant Date -
Jun 8, 2006
app pub date -
Sep 14, 2005
filing date -
Sep 26, 2002
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Abstract
A method for fabricating an HBT is disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
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