Efficient thyristor-type power switches

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United States of America Patent

PATENT NO 7352233
SERIAL NO

11151508

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Abstract

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The highest-power switches now available are based on thyristor-type devices: GTOs (Gate turn-off thyristors), MTOs (MOS controlled turn-off thyristors), IGCTs (Integrated gate commutated thyristors), and the new ETOs (Emitter turn-off thyristors). These devices handle kilovolts and kiloamperes for megawatt inverters/converters. Measurements by the inventors show that conduction losses of MOSFETs and switching losses of IGCTs are drastically decreased by cryo-cooling. IGCTs, ETOs, and MTOs, together with many small, low voltage MOSFETs for gate and emitter turn-off circuitry, are cryo-cooled to attain much higher switching speeds and a reduction in size, weight and cost of high-power (megawatt range) equipment.

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Patent Owner(s)

Patent OwnerAddress
MTECH LABORATORIES LLC831 ROUTE 67 BLDG 45C CURTIS INDUSTRIAL PARK BALLSTON SPA NY 12020-0227

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hennessy, Michael J Ballston Lake, NY 20 170
Mueller, Eduard K Ballston Lake, NY 11 70
Mueller, Otward Ballston Lake, NY 4 81

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