Semiconductor devices having amorphous silicon-carbon dielectric and conducting layers
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United States of America Patent
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Apr 1, 2008
Grant Date -
Jul 20, 2006
app pub date -
Sep 9, 2005
filing date -
Sep 9, 2004
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Expired
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Abstract
A method for fabricating a semiconductor device having a plurality of layers, depositing a first layer comprising a medium-k dielectric barrier layer on one of the plurality of layers, depositing a second layer comprising a low-k dielectric layer on the first layer, and depositing a third layer comprising a medium-k dielectric barrier on the second layer.
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