Process for manufacturing a semiconductor device, a semiconductor device and a high-frequency circuit
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United States of America Patent
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Mar 25, 2008
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N/A
app pub date -
Oct 5, 2005
filing date -
Oct 5, 2004
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Abstract
A process for manufacturing a semiconductor device, provides that a silicide layer is formed, an amorphous semiconductor layer is applied both to the silicide layer and to an open monocrystalline semiconductor region, adjacent to the silicide layer, and during a subsequent temperature treatment, the amorphous semiconductor layer is crystallized proceeding from the open, monocrystalline semiconductor region, acting as a crystallization nucleus, so that the silicide layer is covered at least partially by a crystallized, monocrystalline semiconductor layer.
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