Semiconductor light-emitting device and method for fabricating the device
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United States of America Patent
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Mar 25, 2008
Grant Date -
Jan 6, 2005
app pub date -
Jul 28, 2004
filing date -
Aug 25, 1999
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Abstract
An n-type AlAs/n-type Al.sub.0.5Ga.sub.0.5As DBR layer and a p-type (Al.sub.0.2Ga.sub.0.8).sub.0.5In.sub.0.5P/p-type Al.sub.0.5In.sub.0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al.sub.0.5Ga.sub.0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.
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