Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor
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United States of America Patent
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Mar 18, 2008
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N/A
app pub date -
Dec 22, 2004
filing date -
May 13, 2004
priority date (Note) -
Expired
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Abstract
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.
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