Method for etching and for forming a contact hole using thereof
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United States of America Patent
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Mar 4, 2008
Grant Date -
Jun 29, 2006
app pub date -
Dec 28, 2005
filing date -
Dec 28, 2004
priority date (Note) -
Expired
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Abstract
A method for forming a structure formed by etching which is typified by a contact hole in the semiconductor and a method for manufacturing a display device using the structure. The etching method includes at least, forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing.
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