Method for the passivation of the mirror-faces surfaces of optical semi-conductor elements
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United States of America Patent
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Mar 4, 2008
Grant Date -
Dec 29, 2005
app pub date -
May 8, 2003
filing date -
May 13, 2002
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Abstract
The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation to the material on the mirror-type surface and the remaining components of a natural oxide. In a preferred embodiment, the optical semi-conductor elements is a GaAs-based semi-conductor laser, the reactive and low-energy medium is an atomic hydrogen and the protective layer is made of ZnSe.
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