In-situ formation of metal insulator metal capacitors
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United States of America Patent
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Feb 26, 2008
Grant Date -
Jul 13, 2006
app pub date -
Jul 18, 2003
filing date -
Jul 19, 2002
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Abstract
The invention describes an in-situ method of fabricating a metal insulator metal (MIM) capacitor and products formed by the same. The method utilizes atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD). In the method, a metal precursor is sequentially reacted with a nitrogen source, oxidant, and then a nitrogen source again. Reaction with the nitrogen source generates the outermost conductive metal nitride (MN) layers (121). Reaction with the oxidant generates an inner dielectric metal oxide (MO.sub.x) layer (110). Alternatively, or in addition, the metal precursor can be reacted with a mixture of oxidant and nitrogen source to generate inner dielectric layer(s) (231, 232, 310) of metal oxynitride (MO.sub.xN.sub.y). Because the same metal is used throughout the capacitor, the layers in the MIM capacitor exhibits excellent compatibility and stability.
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