Multidirectional leakage path test structure

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United States of America Patent

PATENT NO 7332741
APP PUB NO 20060113532A1
SERIAL NO

10996365

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Abstract

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A test structure for testing a multidirectional current leakage path. A first doped region of a first conductivity is in the first well of the first conductivity in a substrate, in which the first doped region has a dopant concentration higher than the first well has. A first contact is on the first doped region and contacts the first doped region. The first contact has first and second portions respectively parallel to the first and second directions. A plurality of second doped regions of a second conductivity are in the first well and isolated from the first doped region. In a third direction, the second regions are adjacent to each another and isolate the first portion from the second portion. A plurality of second contacts are on the second doped regions and each one is corresponding to each the second doped region. With a relative shift between the first contact and the second doped region, the partial overlap is used in the test of a multidirectional leakage path.

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Patent Owner(s)

Patent OwnerAddress
GRACE SEMICONDUCTOR MANUFACTURING CORPORATIONNO 818 GUOSHOUJING ROAD ZHANGJIANG HIGH-TECH PARK SHANGHAI 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
He, Jun Shanghai, CN 231 1098
Jiang, Ning Shanghai, CN 112 821
Pu, Xinghua Shanghai, CN 2 0
Tsai, Mon-Chin Shanghai, CN 11 137

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