Sense amplifier circuit and method of operation
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United States of America Patent
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Feb 12, 2008
Grant Date -
N/A
app pub date -
Sep 23, 2005
filing date -
Sep 23, 2005
priority date (Note) -
Expired
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Abstract
In one arrangement, a semiconductor memory device can include a sense amplifier circuit (300) having drive high transistors (P30/P31), drive low transistors (N31/N32) and equalization transistors (N33-N35). Such transistors can have a body bias (VbiasN, VbiasP) that varies according to the operation conditions of the semiconductor memory device. Such variations can include any of: manufacturing process variations, operating temperature, or operating voltage.
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