Method for measuring ion-implanted semiconductors with improved repeatability
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United States of America Patent
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Feb 12, 2008
Grant Date -
Sep 8, 2005
app pub date -
Feb 28, 2005
filing date -
Mar 2, 2004
priority date (Note) -
Expired
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Abstract
The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
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