Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor
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United States of America Patent
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Jan 29, 2008
Grant Date -
Sep 21, 2006
app pub date -
May 4, 2006
filing date -
May 20, 2003
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Abstract
A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as N.sub.2O. In one embodiment, a DCS-HTO film is annealed by heating N.sub.2O gas to a temperature in the range of about 825.degree. C. to about 950.degree. C. so as to trigger exothermic decomposition of the N.sub.2O gas and flowing the heated gas across the DCS-HTO film so that disassociated atomic oxygen radicals within the heated N.sub.2O gas can transfer disassociating energy to chlorine atoms bound within the DCS-HTO film and so that the atomic oxygen radicals can fill oxygen vacancies within the semiconductor-oxide matrix of DCS-HTO film. An improved ONO structure may be formed with the annealed DCS-HTO film for use in floating gate or other memory applications.
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