High-temperature superconductive device
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United States of America Patent
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Jan 29, 2008
Grant Date -
Feb 24, 2005
app pub date -
Jul 27, 2004
filing date -
Jul 29, 2003
priority date (Note) -
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Abstract
A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density J.sub.c being kept at a high level.
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