TEM sample preparation from a circuit layer structure
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United States of America Patent
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Jan 8, 2008
Grant Date -
Nov 2, 2006
app pub date -
Apr 27, 2005
filing date -
Apr 27, 2005
priority date (Note) -
Expired
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Abstract
A method of TEM sample preparation from a circuit layer structure, the method comprising electron-beam assisted deposition of a first protective layer over a site of interest of the circuit layer structure; ion-beam assisted deposition of a second protective layer over the first protective layer; and ion-beam milling at the site of interest through the first and second protective layers.
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