Nitride semiconductor laser device and a method for improving its performance
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United States of America Patent
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Jan 1, 2008
Grant Date -
Nov 10, 2005
app pub date -
Jun 26, 2003
filing date -
Jun 26, 2002
priority date (Note) -
Expired
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Abstract
The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula Al.sub.xGa.sub.1-x-yIN.sub.yN, where 0.ltoreq.x+y.ltoreq.1, 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention.
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