Sense amplifier circuit and method
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United States of America Patent
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Dec 25, 2007
Grant Date -
N/A
app pub date -
Jun 16, 2004
filing date -
Jun 23, 2003
priority date (Note) -
Expired
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Abstract
A semiconductor device memory device (300) can include a sense amplifier (302) enabled according to a first sense signal (setn) and a second sense signal (setp). In a sense operation, a first sense signal (setn) can be driven to a first, below ground potential. Subsequently, in the same sense operation, the first sense signal (setn) can be raised and maintained at a ground potential. Such an approach can substantially eliminate a sense amplifier stall condition that can occur under low temperature and/or low voltage operation. According to another aspect of the embodiments, a more negative logical '0' value can be written back into the memory cell during an access and/or refresh operation. This more negative value is available due to the below ground level provided during a sense operation.
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