Low dielectric materials and methods for making same
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United States of America Patent
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Dec 11, 2007
Grant Date -
Dec 4, 2003
app pub date -
May 30, 2002
filing date -
May 30, 2002
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Abstract
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (.kappa.) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E.sub.0'), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E.sub.0'), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
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