Emissivity-independent silicon surface temperature measurement
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 11, 2007
Grant Date -
Mar 15, 2007
app pub date -
Jan 23, 2002
filing date -
Jan 24, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method and system for measuring remotely the surface temperature of a silicon wafer and layers, without the need to know the surface emissivity. The surface temperature is measured in-situ and in real-time during a high-temperature process, in a vacuum system, by using the linear polarization property of radiation. A blackbody source is heated to various, known temperatures, and provides radiation that impinges on the silicon surface and is reflected from it together with a self-emitted component. This combined reflected radiation is polarized and filtered to an appropriate wavelength, and observed with an imaging camera. Pairs of orthogonally polarized images of the surface are obtained for a set silicon surface temperature and for each blackbody temperature. The pairs of images are analyzed, pixel by pixel, to obtain a null polar level indicative of the surface temperature. The system is provided with means for rapid variation of the blackbody temperature, thus allowing measurement of rapidly changing silicon surface temperatures.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully