DMOS transistor
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United States of America Patent
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Dec 4, 2007
Issued Date -
N/A
app pub date -
Aug 16, 2002
filing date -
Aug 17, 2001
priority date (Note) -
Expired
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Abstract
A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low `on` resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the low doped drain region LDDR (22, 26) of the transistor is a doping zone (24) which is shallow in comparison with the penetration depth of the source/drain region (3, 5), of inverted conductivity type to the LDDR (22, 26) (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR (22, 26) and does not exceed a nett doping of 8E12 At/cm2.
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