Semiconductor memory device and manufacturing method for the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7304343
APP PUB NO 20050224847A1
SERIAL NO

11084648

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Abstract

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The present invention provides a semiconductor memory device including: a semiconductor substrate of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion formed on the substrate, (ii) at least two charge-storage layers formed around a periphery of the columnar semiconductor portion and divided in a direction vertical to the semiconductor substrate, and (iii) a control gate that covers at least a portion of charge-storage layers, wherein the memory cell is capable of holding two-bit or more data.

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Patent Owner(s)

  • FUJIO MASUOKA;SHARP KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Horii, Shinji Fukuyama, JP 17 528
Masuoka, Fujio Sendai, JP 412 6771
Tanigami, Takuji Kashihara, JP 26 616
Yokoyama, Takashi Fukuyama, JP 220 2945

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