Defect size projection
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United States of America Patent
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Nov 27, 2007
Grant Date -
Aug 10, 2006
app pub date -
Dec 29, 2005
filing date -
Oct 24, 2003
priority date (Note) -
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Abstract
A system and method of inspecting semiconductor wafers that is capable of determining a scattering power associated with a wafer surface defect whether or not the scattering power associated with the defect exceeds the dynamic range of the system. The scattering power of the detected defect is obtained by determining the height of a Gaussian shape representing data collected by the system. The height of the Gaussian shape may be determined by defining a cross-sectional area of the Gaussian shape at an intermediate height, determining a cross-sectional area value and combining the area value, intermediate height and a slope value m that is representative of a relationship between the area of a cross-section in a Gaussian pulse and the height of the pulse at the cross-section. The technique increases the dynamic range of the equipment with a uniform scan process that can determine all defect sizes in a single scan pass.
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