1T1R resistive memory array with chained structure
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United States of America Patent
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Nov 20, 2007
Grant Date -
Nov 10, 2005
app pub date -
May 3, 2005
filing date -
May 3, 2004
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Abstract
A 1T1R resistive memory array comprised of chains of memory cells, where each memory cell is composed of a resistive element in parallel with a switch. Such chains of memory cells are non-volatile and provide for each of the memory cells to be randomly accessed.
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