Method of fabricating memory and memory
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United States of America Patent
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Nov 20, 2007
Grant Date -
Mar 23, 2006
app pub date -
Oct 28, 2005
filing date -
Mar 25, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.
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