Method for forming a layered semiconductor technology structure and corresponding layered semiconductor technology structure
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United States of America Patent
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Nov 13, 2007
Grant Date -
Dec 9, 2004
app pub date -
Oct 11, 2002
filing date -
Oct 12, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The following invention provides a method for forming a layered semiconductor structure having a layer of a first semiconductor material on a substrate of at least one second semiconductor material, comprising the steps of: providing said substrate; burying said layer of said first semiconductor material in said substrate, said buried layer having an upper surface and a lower surface and dividing said substrate into an upper part and a lower part; creating a buried damage layer; which at least partly adjoins and/or partly includes said upper surface of said buried layer; and removing said upper part of said substrate and said buried damage layer for exposing said buried layer. The invention also provides a corresponding layered semiconductor structure.
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