External cavity semi-conductor laser and method for fabrication thereof
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United States of America Patent
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Nov 13, 2007
Grant Date -
Dec 23, 2004
app pub date -
May 24, 2004
filing date -
May 23, 2003
priority date (Note) -
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Abstract
The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., .about.3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to provide a single mode of operation, and optionally a selectable mode of operation.
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