Process for producing single-crystal gallium nitride
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United States of America Patent
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Nov 13, 2007
Grant Date -
May 12, 2005
app pub date -
Jul 16, 2004
filing date -
Jul 29, 2003
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Expired
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Abstract
A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6.times.10.sup.4 atm. and 10.times.10.sup.4 atm. and at a high temperature between 2,200.degree. C. and 2,500.degree. C. and then slowly cooling the obtained gallium nitride melt at the stated high pressure.
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